Mironova Labs

TMHD Precursors for Semiconductor ALD/CVD

US-manufactured, halide-free, CHIPS Act supply-chain ready

For process engineers selecting ALD/CVD precursors for high-k dielectrics, metallization, and advanced node integration

Request Samples Under NDA Metal-Organic Precursors Science Hub

28+

Published M(TMHD)ₙ Processes

~60%

Domestic Supply Gap

$165B+

Announced US Fab Investment

≥99%

Assay Purity

Supported by peer-reviewed research·≥99% purity·Halide-free chemistry·US-manufactured (Fairfield, NJ)·CHIPS Act supply-chain ready

TMHD (2,2,6,6-tetramethyl-3,5-heptanedionato) metal complexes are halide-free ALD/CVD precursors that eliminate chlorine and fluorine contamination pathways in thin-film deposition. Mironova manufactures Zr(TMHD)₄, Cu(TMHD)₂, Gd(TMHD)₃, and other metal-TMHD complexes at ≥99% purity from our US facility, supporting CHIPS Act domestic supply chain requirements.

Precursor Science Hub Precursor Catalog

Challenges & Solutions

Your Challenge. Our Answer.

We understand the specific problems you face — and we built solutions for each one.

The Problem

Halide precursors (HfCl₄, ZrCl₄) leave 1–3 at.% residual Cl that creates electron traps and degrades dielectric performance

Mironova’s Answer

TMHD precursors are entirely halide-free — no Cl or F contamination pathway. Eliminates halide-induced trap formation as a failure mode.

0% halide contamination

The Problem

Fluorinated precursors (Cu(hfac)₂) generate HF that corrodes reactor components and etches TaN/TiN barrier layers

Mironova’s Answer

Cu(TMHD)₂ is fluorine-free. No HF byproducts, no reactor corrosion, no barrier damage.

The Problem

CHIPS-funded fabs need domestic, traceable suppliers — but most specialty precursors are sourced from China or fragmented global suppliers

Mironova’s Answer

Mironova manufactures all TMHD precursors at our Fairfield, NJ facility with full batch traceability, raw material provenance documentation, and no China-linked intermediates — ready for CHIPS Act supply-chain requirements.

100% domestic supply chain

The Problem

Precursor decomposition in heated delivery lines causes parasitic CVD and non-uniform deposition

Mironova’s Answer

TMHD ligands provide exceptional thermal stability. Zr(TMHD)₄ sublimes cleanly at 180–220 °C with predictable dosing under characterized conditions.

Published Research

Published Evidence

Key findings from peer-reviewed literature relevant to your application.

ZrO₂ ALD Performance

k = 24–32 dielectric constant, self-limiting growth

Zr(TMHD)₄/O₃ delivers self-limiting growth at 375–400 °C, GPC 0.24 Å/cycle, k = 24–32, leakage 3.3 × 10⁻⁶ A/cm² at 1 MV/cm.

Niinistö et al., Thin Solid Films 2005

Halide Contamination Eliminated

Eliminates 1–3 at.% Cl contamination pathway

HfCl₄/H₂O ALD leaves 1–3 at.% residual Cl at ~300 °C, acting as electron traps. TMHD precursors eliminate this pathway entirely.

Park et al., J. Phys. Chem. C 2016

Fluorine-Free Cu Seed Layers

1.78–8 µΩ·cm resistivity, zero HF exposure

Cu(TMHD)₂ yields Cu films with 1.78–8 µΩ·cm resistivity and excellent adhesion on TaN/TiN — without the HF corrosion from Cu(hfac)₂.

Mane & Shivashankar, Mater. Sci. Semicond. Process. 2004

Gd-Doped ZrO₂ for Advanced DRAM

Gd doping in ZrO₂ achieves EOT of 0.76 nm with improved leakage via p-type acceptor mechanism — a credible demand vector for Gd(TMHD)₃ in next-generation DRAM capacitor dielectrics.

Lee et al., ACS Appl. Electron. Mater. 2024

Market Growth

ALD/CVD precursor market ~$1.7–1.9B (2024) with ~9% CAGR through 2028. High-k dielectric segment is among the steepest growth trajectories.

TECHCET Market Report 2024–2025

Market Context

US Fab Expansion Demands Domestic Precursor Supply

Over $165B in new US semiconductor fab investment has been announced through 2032, yet ~60% of semiconductor chemicals and materials lack sufficient domestic supply. The ALD/CVD precursor market is projected at ~$1.7–1.9B (2024) with ~9% CAGR through 2028. Gate-all-around architectures and sub-2nm nodes are making precursor quality a first-order yield variable — and CHIPS Act supply-chain requirements are reshaping how fabs qualify material vendors.

Gate-all-around transistors at sub-2nm increase high-k dielectric deposition steps per wafer
CHIPS Act Section 4003 grants require domestic supply-chain documentation for qualifying vendors
Major US fabs targeting 2027–2028 high-volume manufacturing start dates

TECHCET; McKinsey (March 2025); CHIPS Program Office

$9B

Capex to close US materials gap

~9%

Precursor market CAGR to 2028

~$1.8B

ALD/CVD precursor market

Product Catalog

ALD Process Parameters

ALD window 375–400 °C with O₃, GPC 0.24 Å/cycle.

Vaporization 120–140 °C, Cu⁰ via H₂ plasma, Cu₂O via H₂O/O₃ at 80–160 °C.

ALD window 250–300 °C with O₃, GPC ~0.3 Å/cycle.

All precursors require O₃ as oxidant (H₂O insufficient for TMHD ligand combustion).

Sublimation-grade purity with inert-atmosphere packaging.

For full ALD windows, vapor pressure curves, and peer-reviewed studies, please visit our Metal-Organic Precursors Science Hub.

Why Mironova

Your Advantage with Mironova

Domestic Manufacturing

All TMHD precursors produced in Fairfield, NJ with full batch traceability. No China-linked intermediates. Ready for CHIPS Act supply-chain documentation requirements.

Halide-Free Chemistry

TMHD ligands eliminate Cl and F contamination pathways. No halide-induced trap formation, no HF corrosion of reactor components or barrier layers.

28+ Metal Platform

Published ALD/CVD processes exist for 28+ M(TMHD)ₙ complexes spanning Zr, Hf, Cu, Gd, Er, Y, and more — a single precursor chemistry platform for diverse integration schemes.

R&D to Pilot Bridge

Evaluation quantities through pilot-scale supply from one qualified source. Custom purification and analytical characterization matched to your process specifications.

Request Technical Data

Get product specifications, CoA samples, and pricing for your evaluation.

FAQ

Frequently Asked Questions

Common technical questions about this product line, answered by our scientific team.

High-volume ZrO₂ ALD production often uses amide precursors (e.g., TEMAZ). Zr(TMHD)₄ is strongest for MOCVD, research-scale ALD, and applications where halide-free deposition or specific ALD windows (375–400°C with O₃) are required. We help you determine the right precursor for your integration scheme.

At sub-3nm gate lengths, parts-per-billion metallic impurities (Fe, Na, K) and parts-per-million halide residuals can create electrically active defects that shift threshold voltages or increase leakage. Assay percentage alone is insufficient — trace metals (ppb) and halide content (ppm) are the critical specs.

We manufacture domestically in NJ with documented raw material provenance, no foreign-adversary-linked intermediates, and full analytical traceability (ICP-MS metals, CoA). This supports the supply-chain security documentation that CHIPS-funded facilities require.

Yes. The TMHD ligand system supports 28+ published metal complexes. We offer custom synthesis for metals and stoichiometries not in our standard catalog, with analytical characterization to your specifications.