TMHD Precursors for Semiconductor ALD/CVD
US-manufactured, halide-free, CHIPS Act compliant
For process engineers selecting ALD/CVD precursors for high-k dielectrics, metallization, and advanced node integration
Your Challenge. Our Answer.
We understand the specific problems you face — and we built solutions for each one.
The Problem
Halide precursors (HfCl₄, ZrCl₄) leave 1–3 at.% residual Cl that creates electron traps and degrades dielectric performance
Mironova’s Answer
TMHD precursors are entirely halide-free — no Cl or F contamination pathway. Zero risk of halide-induced trap formation.
The Problem
Fluorinated precursors (Cu(hfac)₂) generate HF that corrodes reactor components and etches TaN/TiN barrier layers
Mironova’s Answer
Cu(TMHD)₂ is fluorine-free. No HF byproducts, no reactor corrosion, no barrier damage.
The Problem
Supply chain dependence on non-US precursor sources creates CHIPS Act compliance risk for fab-level procurement
Mironova’s Answer
Mironova manufactures all TMHD precursors at our Fairfield, NJ facility — full US supply chain transparency.
The Problem
Precursor decomposition in heated delivery lines causes parasitic CVD and non-uniform deposition
Mironova’s Answer
TMHD ligands provide exceptional thermal stability. Zr(TMHD)₄ sublimes cleanly at 180–220 °C with predictable dosing under characterized conditions.
Published Evidence
Key findings from peer-reviewed literature relevant to your application.
ZrO₂ ALD Performance
Zr(TMHD)₄/O₃ delivers self-limiting growth at 375–400 °C, GPC 0.24 Å/cycle, k = 24–32, leakage 3.3 × 10⁻⁶ A/cm² at 1 MV/cm.
Niinistö et al., Thin Solid Films 2005
Halide Contamination Eliminated
HfCl₄/H₂O ALD leaves 1–3 at.% residual Cl at ~300 °C, acting as electron traps. TMHD precursors eliminate this pathway entirely.
Park et al., J. Phys. Chem. C 2016
Fluorine-Free Cu Seed Layers
Cu(TMHD)₂ yields Cu films with 1.78–8 µΩ·cm resistivity and excellent adhesion on TaN/TiN — without the HF corrosion from Cu(hfac)₂.
Mane & Shivashankar, Mater. Sci. Semicond. Process. 2004
Gd-Doped ZrO₂ for Advanced DRAM
Gd doping in ZrO₂ achieves EOT of 0.76 nm with improved leakage via p-type acceptor mechanism — a credible demand vector for Gd(TMHD)₃ in next-generation DRAM capacitor dielectrics.
Lee et al., ACS Appl. Electron. Mater. 2024
Market Growth
ALD/CVD precursor market ~$1.2–1.9B (2024) with 6.5–10% CAGR through 2032. High-k dielectric segment is among the steepest growth trajectories.
TECHCET Market Report 2024–2025
Recommended Products
The specific products from our catalog that match your application.
ALD Process Parameters
- Zr(TMHD)₄: ALD window 375–400 °C with O₃, GPC 0.24 Å/cycle
- Cu(TMHD)₂: Vaporization 120–140 °C, Cu⁰ via H₂ plasma, Cu₂O via H₂O/O₃ at 80–160 °C
- Gd(TMHD)₃: ALD window 250–300 °C with O₃, GPC ~0.3 Å/cycle
- All precursors require O₃ as oxidant (H₂O insufficient for TMHD ligand combustion)
- Sublimation-grade purity with inert-atmosphere packaging
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Related Resources
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