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Metal-organic precursors

TMHD-based metal-organic precursors, with compound-specific identity, handling requirements and technical documentation.

Graphite technical study of a layered microchip and battery electrode cross-section, with green film accents
Thin films & energy materials · conceptual study
Catalog purity
≥99%
Compound-specific specifications apply.
TMHD portfolio
10 precursors
Metal beta-diketonates for ALD and CVD programs.

Compound directory

Identity and specifications.

Select a compound for its product-specific specifications, handling requirements and documentation.

10 of 10 compounds

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III)

High-purity bismuth beta-diketonate precursor for CVD and ALD of bismuth oxide and Bi-containing ferroelectric and piezoelectric thin films. Critical source material for BiFeO₃, Bi₄Ti₃O₁₂, and related multiferroic oxide deposition.

CAS number
142617-53-6
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium(IV) chemical structure

Metal-organic precursors

Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium(IV)

High-purity cerium(IV) beta-diketonate precursor for CVD and ALD of cerium oxide (CeO₂) thin films. Used in heterogeneous catalysis supports, solid oxide fuel cell interlayers, UV-blocking coatings, and CeO₂-based buffer layers.

CAS number
18960-54-8
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) chemical structure

Metal-organic precursors

Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate)

High-purity copper beta-diketonate precursor for CVD and ALD applications.

CAS number
14040-05-2
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gadolinium(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gadolinium(III)

High-purity gadolinium beta-diketonate precursor for CVD and ALD applications.

CAS number
14768-15-1
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)

High-purity lanthanum beta-diketonate precursor for CVD and ALD of lanthanum oxide and La-doped high-k dielectric thin films. Key material for advanced CMOS gate stacks requiring ultra-high dielectric constant oxide layers.

CAS number
14319-13-2
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III)

High-purity manganese(III) beta-diketonate precursor for CVD and ALD of manganese oxide thin films. Used in RRAM, magnetic storage, and battery electrode applications requiring precise Mn stoichiometry.

CAS number
14324-99-3
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) chemical structure

Metal-organic precursors

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II)

High-purity nickel(II) beta-diketonate precursor for CVD and ALD deposition of nickel oxide thin films. Key material for RRAM switching layers, p-type transparent conductors, and nickel-based electrode coatings.

CAS number
14481-08-4
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III)

High-purity yttrium beta-diketonate precursor for CVD and ALD of yttrium oxide and yttria-stabilized zirconia (YSZ) thin films. Critical for solid oxide fuel cells, thermal barrier coatings, and high-k dielectric stacks.

CAS number
15632-39-0
Catalog purity
≥99.0%
Minimum order
500g
View specifications
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)ytterbium(III) chemical structure

Metal-organic precursors

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)ytterbium(III)

High-purity ytterbium beta-diketonate precursor for CVD and ALD of ytterbium oxide and Yb-doped optical and electronic thin films. Key rare-earth source for Er/Yb co-doped amplifier coatings and high-k dielectric research.

CAS number
15492-52-1
Catalog purity
≥99.0%
Minimum order
25g
View specifications
Zirconium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate) chemical structure

Metal-organic precursors

Zirconium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate)

High-purity zirconium beta-diketonate precursor for CVD and ALD applications.

CAS number
18865-74-2
Catalog purity
≥99.0%
Minimum order
25g
View specifications

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