Zr(TMHD)₄

Overview

Zirconium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate), commonly abbreviated as Zr(TMHD)₄, is a highly volatile zirconium beta-diketonate complex widely used as a precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of zirconium oxide thin films. The bulky TMHD ligands provide excellent volatility and thermal stability, making this compound ideal for vapor-phase deposition processes.

Key Advantages

Zr(TMHD)₄ offers several distinct advantages for thin film deposition:

• High Volatility: Sublimes cleanly at moderate temperatures (180-220°C)
• Thermal Stability: Decomposes cleanly without leaving carbon residues
• Air Stability: More handleable than many organometallic precursors
• Established Performance: Decades of documented use in CVD/ALD processes
• High Purity Available: Electronic-grade material for demanding applications

Applications

Semiconductor Manufacturing

Used for depositing high-k dielectric ZrO₂ films for gate oxides, DRAM capacitors, and other microelectronic applications requiring high dielectric constant materials.

Optical Coatings

Zirconium oxide films deposited from this precursor exhibit excellent optical properties for anti-reflective coatings, optical filters, and protective layers.

Fuel Cell Components

ZrO₂ thin films for solid oxide fuel cell electrolytes and protective coatings on interconnects.

Manufacturing Capabilities

We offer Zr(TMHD)₄ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available for air-sensitive handling requirements.

Important Safety Information

Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.