Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II)
Also known as: Ni(TMHD)₂, Nickel(II) TMHD, Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel, Ni(thd)₂
High-purity nickel(II) beta-diketonate precursor for CVD and ALD deposition of nickel oxide thin films. Key material for RRAM switching layers, p-type transparent conductors, and nickel-based electrode coatings.
Product Information
CAS Number
14481-08-4
Molecular Formula
C₂₂H₃₈NiO₄
Molecular Weight
425.23 g/mol
Prices and lead time available upon request
Product Documents
Safety Data Sheet (SDS)
Available on request
Product Specification
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Certificate of Analysis
Provided with order
Overview
Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II), abbreviated Ni(TMHD)₂, is a nickel beta-diketonate complex widely used as a precursor for the chemical vapor deposition (CVD) and atomic layer deposition (ALD) of nickel oxide (NiO) thin films. Its relatively high volatility among nickel precursors and clean thermal decomposition characteristics make it a reliable source material for p-type oxide semiconductor deposition.
Key Advantages
- High Purity: ≥99.0% with low halide content for clean NiO film stoichiometry
- Good Volatility: Sublimes at temperatures compatible with standard ALD/CVD delivery systems
- Clean NiO Deposition: Decomposes to yield stoichiometric NiO films with low carbon contamination
- Versatile Oxidant Compatibility: Compatible with O₂, O₃, and H₂O co-reactants for ALD processes
- Inert Atmosphere Packaging: Sealed under nitrogen or argon to prevent hydrolysis during storage
Applications
Resistive RAM (RRAM)
NiO is a model RRAM switching material. ALD NiO films deposited from Ni(TMHD)₂ enable precise thickness control of the switching layer, directly impacting forming voltage, set/reset characteristics, and device uniformity across large-area arrays.
p-Type Transparent Oxide Semiconductors
NiO is one of the few intrinsically p-type transparent conducting oxides. Thin films from Ni(TMHD)₂ are incorporated into transparent electronics, perovskite solar cell hole-transport layers, and OLED hole-injection layers.
Supercapacitor Electrodes
NiO and Ni(OH)₂ coatings on high-surface-area substrates are ALD-deposited using Ni(TMHD)₂ to create pseudocapacitive electrode structures with high energy density and fast charge-discharge rates.
Catalytic Applications
Nickel oxide films serve as catalysts and catalyst support materials for oxidation and hydrogenation reactions, where ALD enables precise surface loading and uniform coverage on complex substrates.
Manufacturing Capabilities
We offer Ni(TMHD)₂ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. Glass packaging required for all orders.
Important Safety Information
Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.
Related Resources
Technical data, product specifications, and application guidance.
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