Products/Metal Organic Precursors/Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III)

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III)

Also known as: Mn(TMHD)₃, Manganese(III) TMHD, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese, Mn(thd)₃

High-purity manganese(III) beta-diketonate precursor for CVD and ALD of manganese oxide thin films. Used in RRAM, magnetic storage, and battery electrode applications requiring precise Mn stoichiometry.

Product Information

CAS Number

14324-99-3

Molecular Formula

C₃₃H₅₇MnO₆

Molecular Weight

604.75 g/mol

Prices and lead time available upon request

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Product Documents

Safety Data Sheet (SDS)

Available on request

Product Specification

Available on request

Certificate of Analysis

Provided with order

Overview

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III), abbreviated Mn(TMHD)₃, is a manganese beta-diketonate complex designed for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of manganese-containing oxide thin films. The three bulky TMHD ligands impart good volatility and clean thermal decomposition, enabling precise deposition of MnO, Mn₃O₄, and MnO₂ films across a range of process conditions.

Key Advantages

  • Controlled Oxidation State: Mn(III) oxidation state enables access to multiple oxide phases (MnO, Mn₂O₃, Mn₃O₄, MnO₂) by tuning O₂/O₃ co-reactant
  • Good Volatility: Sublimes at moderate temperatures compatible with standard CVD/ALD delivery systems
  • Clean Decomposition: Leaves minimal carbon residues under standard deposition conditions
  • High Purity: ≥99.0% purity with low halide content for clean film interfaces
  • Inert Atmosphere Packaging: Available in sealed ampules under nitrogen or argon

Applications

Resistive RAM (RRAM)

MnO-based switching layers deposited by ALD from Mn(TMHD)₃ are studied for resistive memory applications, where precise stoichiometry control of the Mn oxide phase determines switching performance and endurance.

Magnetic Thin Films

Manganese oxide films serve as antiferromagnetic pinning layers in spintronic devices and exchange-bias stacks. Mn(TMHD)₃ enables conformal deposition on complex geometries required in advanced magnetic sensor fabrication.

Battery Electrode Coatings

ALD-deposited MnO₂ coatings from Mn(TMHD)₃ are explored as protective and electrochemically active overlayers on lithium-ion and solid-state battery electrode particles, improving cycle stability.

Catalytic Coatings

Manganese oxide films exhibit catalytic activity for oxidation reactions and are deposited on structured supports for automotive and industrial catalysis applications.

Manufacturing Capabilities

We offer Mn(TMHD)₃ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. Glass packaging required for all orders.

Important Safety Information

Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.

Questions About This Product?

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