Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium(IV)

Overview

Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium(IV), abbreviated Ce(TMHD)₄, is a Ce(IV) beta-diketonate precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of cerium dioxide (CeO₂) thin films. As a tetravalent cerium compound, Ce(TMHD)₄ directly yields CeO₂ under oxidizing conditions without requiring high-temperature post-deposition annealing to achieve the desired +4 oxidation state — a significant process advantage over Ce(III) precursors.

Key Advantages

• Ce(IV) Oxidation State: Directly yields stoichiometric CeO₂ films; avoids Ce₂O₃ impurity phases common when using Ce(III) precursors
• High Purity: ≥99.0% with low residual metal content for catalytic and electronic applications
• Good Volatility: The four TMHD ligands provide adequate vapor pressure for standard solid-source delivery
• Broad Oxidant Compatibility: Compatible with O₂, O₃, and water for diverse CeO₂ ALD process chemistries
• Inert Atmosphere Packaging: Protected from moisture and light to preserve Ce(IV) oxidation state

Applications

Heterogeneous Catalysis

CeO₂ is the most widely studied rare-earth oxide catalyst support. ALD-deposited CeO₂ films from Ce(TMHD)₄ provide oxygen-storage capacity (OSC) critical for three-way automotive catalysts, CO oxidation, and water-gas shift reactions. Precise ALD control enables engineered CeO₂ overlayers on Pd, Pt, and Ni nanoparticles.

Solid Oxide Fuel Cell Interlayers

CeO₂ and gadolinium-doped ceria (GDC) interlayers deposited from Ce(TMHD)₄ are used in SOFC electrode assemblies to prevent La-Sr-Mn perovskite cathode interdiffusion into YSZ electrolytes and to provide an ionic-conducting buffer at the cathode/electrolyte interface.

UV-Blocking & Optical Coatings

CeO₂ is a strong UV absorber (bandgap ≈ 3.2 eV) used in UV-protective optical coatings on glass, lenses, and sensors. ALD from Ce(TMHD)₄ enables conformal UV-blocking layers on complex optical component geometries.

Buffer Layers for Epitaxial Oxide Growth

CeO₂ is lattice-matched to Si(111) and serves as a template layer for growing epitaxial oxide films (e.g., BaTiO₃, SrTiO₃) on silicon substrates for oxide-on-silicon integration.

Manufacturing Capabilities

We offer Ce(TMHD)₄ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. Glass packaging required; store away from light to preserve Ce(IV) state.

Important Safety Information

Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere away from light and moisture. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.