Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III)

Overview

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III), abbreviated Bi(TMHD)₃, is a bismuth beta-diketonate complex used as a precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of bismuth oxide (Bi₂O₃) and complex bismuth-containing oxide films including BiFeO₃, Bi₄Ti₃O₁₂ (BIT), and SrBi₂Ta₂O₉ (SBT). Bismuth is indispensable in the synthesis of lead-free ferroelectric and multiferroic thin films, positioning Bi(TMHD)₃ as a key precursor for next-generation memory and piezoelectric MEMS applications.

Key Advantages

• High Purity: ≥99.0% with low Pb and other heavy metal impurities — critical for lead-free ferroelectric certification
• Good Volatility: Sublimes at moderate temperatures; compatible with standard solid-source bubbler delivery
• Clean Decomposition: Yields Bi₂O₃ films with controlled stoichiometry under O₂ and O₃ atmospheres
• Lead-Free Ferroelectric Access: Enables compliant synthesis of RoHS-compatible piezoelectric and ferroelectric films
• Inert Atmosphere Packaging: Sealed under nitrogen or argon for stability during storage and shipping

Applications

BiFeO₃ Multiferroic Films

Bi(TMHD)₃ co-deposited with Fe(TMHD)₃ or Fe(acac)₃ yields BiFeO₃ (BFO) thin films — the most widely studied room-temperature multiferroic, exhibiting both ferroelectric (Tc ≈ 820°C) and antiferromagnetic order. BFO films are pursued for magnetoelectric memory, spin-filter tunnel junctions, and photovoltaic applications.

Layered Bismuth Titanate (Bi₄Ti₃O₁₂)

Bi(TMHD)₃ combined with Ti(TMHD)₄ or Ti(OiPr)₄ deposits Bi₄Ti₃O₁₂ (BIT), a Aurivillius-phase ferroelectric with excellent fatigue resistance. BIT thin films are investigated for non-volatile ferroelectric RAM (FeRAM) as a lead-free alternative to PZT.

Lead-Free Piezoelectric MEMS

BNT (Bi₀.₅Na₀.₅TiO₃) and other Bi-based perovskites deposited from Bi(TMHD)₃ are explored for lead-free piezoelectric actuators and sensors in MEMS devices compliant with RoHS and REACH regulations.

Bi₂O₃ Dielectric & Photocatalytic Films

Bi₂O₃ thin films exhibit high dielectric constants and visible-light photocatalytic activity. ALD Bi₂O₃ from Bi(TMHD)₃ is studied for capacitor dielectrics and photocatalytic coatings on structured supports.

Manufacturing Capabilities

We offer Bi(TMHD)₃ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. Glass packaging required for all orders.

Important Safety Information

Warning: Bismuth compounds should be handled with care. This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety and toxicological information.