Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)
Also known as: La(TMHD)₃, Lanthanum(III) TMHD, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum, La(thd)₃
High-purity lanthanum beta-diketonate precursor for CVD and ALD of lanthanum oxide and La-doped high-k dielectric thin films. Key material for advanced CMOS gate stacks requiring ultra-high dielectric constant oxide layers.
Product Information
CAS Number
14319-13-2
Molecular Formula
C₃₃H₅₇LaO₆
Molecular Weight
688.72 g/mol
Prices and lead time available upon request
Product Documents
Safety Data Sheet (SDS)
Available on request
Product Specification
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Certificate of Analysis
Provided with order
Overview
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III), abbreviated La(TMHD)₃, is a lanthanum beta-diketonate precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of lanthanum oxide (La₂O₃) and lanthanum-containing composite dielectrics such as LaAlO₃ and La-doped HfO₂. The high dielectric constant of La₂O₃ (κ ≈ 27) makes La-based films among the most strategically important rare-earth oxides for next-generation semiconductor dielectric applications.
Key Advantages
- High Purity: ≥99.0% with controlled rare-earth cross-contamination for semiconductor-grade applications
- Good Volatility: Sublimes at temperatures compatible with standard solid-source ALD/CVD delivery
- Clean Thermal Decomposition: Yields La₂O₃ and LaAlO₃ films with low residual carbon
- High-κ Film Access: Enables deposition of one of the highest-κ rare-earth oxides (κ ≈ 27) for advanced gate stacks
- Inert Atmosphere Packaging: Sealed to prevent moisture and CO₂ uptake (La₂O₃ is hygroscopic)
Applications
Advanced CMOS High-k Gate Dielectrics
La(TMHD)₃ is used to deposit La₂O₃ and La-doped HfO₂ gate dielectrics for sub-5 nm logic nodes. Lanthanum doping shifts the flat-band voltage in HfO₂, enabling n-type threshold voltage tuning without physical gate electrode changes — a key technique in advanced finFET and gate-all-around (GAA) transistor architectures.
LaAlO₃ / SrTiO₃ Heterostructures
La(TMHD)₃ co-deposited with Al or Ti precursors produces LaAlO₃ thin films. The LaAlO₃/SrTiO₃ interface exhibits a two-dimensional electron gas (2DEG) of fundamental and applied interest for oxide electronics and neuromorphic computing.
Rare-Earth Doped Optical Films
La₂O₃ serves as a wide-bandgap host matrix for rare-earth luminescent dopants (e.g., Eu, Tb) in thin-film phosphors and scintillators for radiation detection and display applications.
Solid Oxide Electrolytes
Lanthanum-containing perovskite oxides (LaGaO₃ derivatives) deposited by CVD from La(TMHD)₃ are investigated as alternative solid electrolytes for intermediate-temperature SOFCs.
Manufacturing Capabilities
We offer La(TMHD)₃ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. La₂O₃ is hygroscopic — glass packaging and nitrogen purge strongly recommended for all orders.
Important Safety Information
Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis and carbonate formation. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.
Related Resources
Technical data, product specifications, and application guidance.
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