Products/Metal Organic Precursors/Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)

Also known as: La(TMHD)₃, Lanthanum(III) TMHD, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum, La(thd)₃

High-purity lanthanum beta-diketonate precursor for CVD and ALD of lanthanum oxide and La-doped high-k dielectric thin films. Key material for advanced CMOS gate stacks requiring ultra-high dielectric constant oxide layers.

Product Information

CAS Number

14319-13-2

Molecular Formula

C₃₃H₅₇LaO₆

Molecular Weight

688.72 g/mol

Prices and lead time available upon request

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Product Documents

Safety Data Sheet (SDS)

Available on request

Product Specification

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Certificate of Analysis

Provided with order

Overview

Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III), abbreviated La(TMHD)₃, is a lanthanum beta-diketonate precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of lanthanum oxide (La₂O₃) and lanthanum-containing composite dielectrics such as LaAlO₃ and La-doped HfO₂. The high dielectric constant of La₂O₃ (κ ≈ 27) makes La-based films among the most strategically important rare-earth oxides for next-generation semiconductor dielectric applications.

Key Advantages

  • High Purity: ≥99.0% with controlled rare-earth cross-contamination for semiconductor-grade applications
  • Good Volatility: Sublimes at temperatures compatible with standard solid-source ALD/CVD delivery
  • Clean Thermal Decomposition: Yields La₂O₃ and LaAlO₃ films with low residual carbon
  • High-κ Film Access: Enables deposition of one of the highest-κ rare-earth oxides (κ ≈ 27) for advanced gate stacks
  • Inert Atmosphere Packaging: Sealed to prevent moisture and CO₂ uptake (La₂O₃ is hygroscopic)

Applications

Advanced CMOS High-k Gate Dielectrics

La(TMHD)₃ is used to deposit La₂O₃ and La-doped HfO₂ gate dielectrics for sub-5 nm logic nodes. Lanthanum doping shifts the flat-band voltage in HfO₂, enabling n-type threshold voltage tuning without physical gate electrode changes — a key technique in advanced finFET and gate-all-around (GAA) transistor architectures.

LaAlO₃ / SrTiO₃ Heterostructures

La(TMHD)₃ co-deposited with Al or Ti precursors produces LaAlO₃ thin films. The LaAlO₃/SrTiO₃ interface exhibits a two-dimensional electron gas (2DEG) of fundamental and applied interest for oxide electronics and neuromorphic computing.

Rare-Earth Doped Optical Films

La₂O₃ serves as a wide-bandgap host matrix for rare-earth luminescent dopants (e.g., Eu, Tb) in thin-film phosphors and scintillators for radiation detection and display applications.

Solid Oxide Electrolytes

Lanthanum-containing perovskite oxides (LaGaO₃ derivatives) deposited by CVD from La(TMHD)₃ are investigated as alternative solid electrolytes for intermediate-temperature SOFCs.

Manufacturing Capabilities

We offer La(TMHD)₃ from research quantities (25g) to production scale with consistent quality. Custom packaging under inert atmosphere available. La₂O₃ is hygroscopic — glass packaging and nitrogen purge strongly recommended for all orders.

Important Safety Information

Warning: This compound should be handled by qualified professionals in a laboratory environment. Store under inert atmosphere to prevent hydrolysis and carbonate formation. Use appropriate PPE including gloves, safety glasses, and lab coat. Refer to SDS for complete safety information.

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